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Philosophical Magazine
Volume 87, Issue 14-15, 2007
High-brightness gallium nitride nanowire UV–blue light emitting diodes
- DOI:
- 10.1080/14786430701199648
pages 2105-2115
Available online: 22 Jun 2007Abstract
We report on high-brightness GaN nanowire UV–blue light emitting diodes (LEDs), which are fabricated by coupling of n-GaN nanowires and p-GaN substrates using two assembly methods, random dispersion (RD) and dielectrophoresis assisted assembly deposition (DAAD). These GaN nanowire LEDs have bright UV–blue emission (411–437 nm) from the n-GaN nanowire/p-GaN substrate junction and the light emission is strong enough to be observed with the naked eye even for a single GaN nanowire LED. The results reported here should have significant implications for the fabrication of highly efficient, low-cost UV–blue LEDs with low power consumption, as compared to conventional thin-film based GaN LEDs.
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- Citation information:
- Available online: 22 Jun 2007
Author affiliations
- a Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, Jeonju 561-756, Korea
- b Department of Chemistry, University of California and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
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